Isolation of cubic Si₃P₄ in the form of nanocrystals

• Polina K. Nikiforova,
• Sergei S. Bubenov,
• Vadim B. Platonov,
• Andrey S. Kumskov,
• Nikolay N. Kononov,
• Tatyana A. Kuznetsova and
• Sergey G. Dorofeev

Beilstein J. Nanotechnol. 2023, 14, 971–979, doi:10.3762/bjnano.14.80

• was shown to be consistent with Si–H bond cleavage and hydrogen desorption from silicon surfaces [29] (including Si NPs [30]) with the bond completely disappearing at 700 °C as indicated by FTIR spectra [31][32][33]. A temperature of 900 °C was chosen to assess the probability of formation of another

High–low Kelvin probe force spectroscopy for measuring the interface state density

• Ryo Izumi,
• Masato Miyazaki,
• Yan Jun Li and
• Yasuhiro Sugawara

Beilstein J. Nanotechnol. 2023, 14, 175–189, doi:10.3762/bjnano.14.18

• show that the analysis of electrostatic forces in the depletion region at high- and low-frequency AC bias voltages provides information about the interface state density in the semiconductor bandgap. As a preliminary experiment, high-low KPFS measurements were performed on ion-implanted silicon

• surfaces to confirm the dependence of the electrostatic force on the frequency of the AC bias voltage and obtain the interface state density. Keywords: high–low Kelvin probe force microscopy; high–low Kelvin probe force spectroscopy; interface state density; Kelvin probe force microscopy; Kelvin probe

Thermal oxidation process on Si(113)-(3 × 2) investigated using high-temperature scanning tunneling microscopy

• Hiroya Tanaka,
• Shinya Ohno,
• Kazushi Miki and
• Masatoshi Tanaka

Beilstein J. Nanotechnol. 2022, 13, 172–181, doi:10.3762/bjnano.13.12

• the literature. Initial oxidation processes were identified based on high-resolution STM images. Keywords: high-index Si surface; in situ measurement; oxidation; scanning tunneling microscopy (STM); Introduction High-index silicon surfaces have drawn considerable interest for their usefulness in

• understand thermal oxidation on silicon surfaces as well as metal-induced oxidation and silicidation [2]. Nevertheless, dynamic processes in oxidation have been studied scarcely so far, especially for high-index silicon surfaces. The study of the oxides grown on high-index silicon surfaces is of great

• to the transition region are much more restricted for Si(113) compared with those for Si(001) and Si(111). The transition region, in which both oxidation and etching occur simultaneously, is considered to be related to the enhanced roughness of the oxidized silicon surfaces as reported in the

Fabrication of nano/microstructures for SERS substrates using an electrochemical method

• Jingran Zhang,
• Tianqi Jia,
• Xiaoping Li,
• Junjie Yang,
• Zhengkai Li,
• Guangfeng Shi,
• Xinming Zhang and
• Zuobin Wang

Beilstein J. Nanotechnol. 2020, 11, 1568–1576, doi:10.3762/bjnano.11.139

• spots decreases. Sivashanmugan et al. [32] employed FIB technology to prepare nanostructures on silicon surfaces, which were then coated with Au and Ag films to generate SERS substrates. The enhancement factor range of R6G using the substrate was between 2.62 × 106 and 1.74 × 107. Gao et al. [33

Protruding hydrogen atoms as markers for the molecular orientation of a metallocene

• Linda Laflör,
• Michael Reichling and
• Philipp Rahe

Beilstein J. Nanotechnol. 2020, 11, 1432–1438, doi:10.3762/bjnano.11.127

• FDCA molecule to the tip with the carbonyl moiety facing the surface. This would be in line with earlier NC-AFM experiments of naphthalene tetracarboxylic diimide (NTCDI) adsorbed on Ag-terminated silicon surfaces [37]. In the latter case, the observation of submolecular contrast similar to images

Analysis of catalyst surface wetting: the early stage of epitaxial germanium nanowire growth

• Owen C. Ernst,
• Felix Lange,
• David Uebel,
• Thomas Teubner and
• Torsten Boeck

Beilstein J. Nanotechnol. 2020, 11, 1371–1380, doi:10.3762/bjnano.11.121

• were used for these experiments: The first substrate was single-crystalline Si(111) wafers of 25 × 25 × 0.525 mm3 in size. These wafers where chemically cleaned by the conventional Radio Corporation of America (RCA) etching processes, known as RCA 1 and RCA 2, to get hydrophilic silicon surfaces

Formation of nanoripples on ZnO flat substrates and nanorods by gas cluster ion bombardment

• Xiaomei Zeng,
• Vasiliy Pelenovich,
• Bin Xing,
• Rakhim Rakhimov,
• Wenbin Zuo,
• Alexander Tolstogouzov,
• Chuansheng Liu,
• Dejun Fu and
• Xiangheng Xiao

Beilstein J. Nanotechnol. 2020, 11, 383–390, doi:10.3762/bjnano.11.29

• of semiconductor quantum dots [2]. Arrays of metallic nanoparticles or nanowires aligned on dielectric surfaces with nanoripples are ideal for research on plasmonics [3]. Ag nanoparticle arrays created on rippled silicon surfaces have demonstrated excellent sensing of molecules through surface

The importance of design in nanoarchitectonics: multifractality in MACE silicon nanowires

• Stefania Carapezzi and
• Anna Cavallini

Beilstein J. Nanotechnol. 2019, 10, 2094–2102, doi:10.3762/bjnano.10.204

• single value but a range of values of a) E = 80–120 GPa [33] and of b) γHF from 0.5 mN/m [34] to 10.2 mN/m [35]. A value of θ = 70° has been found for silicon surfaces and HF [36]. The range of values for the capillary force has thus been estimated to be 3–65 pN, which is orders of magnitude greater than

In situ characterization of nanoscale contaminations adsorbed in air using atomic force microscopy

• Jesús S. Lacasa,
• Lisa Almonte and
• Jaime Colchero

Beilstein J. Nanotechnol. 2018, 9, 2925–2935, doi:10.3762/bjnano.9.271

• silicon surfaces this second step forms a thin passivating layer. Finally, the surface of the samples is dried by blowing with N2 for about 1 min. AFM images (a, c) and optical image (b) of the tip side of an Olympus OMCL-HA-100 AFM cantilever. Image sizes: 4 × 4 μm2 and 80 nm height scale for the AFM

Charged particle single nanometre manufacturing

• Philip D. Prewett,
• Cornelis W. Hagen,
• Claudia Lenk,
• Steve Lenk,
• Marcus Kaestner,
• Tzvetan Ivanov,
• Ahmad Ahmad,
• Ivo W. Rangelow,
• Xiaoqing Shi,
• Stuart A. Boden,
• Alex P. G. Robinson,
• Dongxu Yang,
• Sangeetha Hari,
• Marijke Scotuzzi and
• Ejaz Huq

Beilstein J. Nanotechnol. 2018, 9, 2855–2882, doi:10.3762/bjnano.9.266

• microscope was used for lithography as well [119][120]. Here, the resist exposure occurs due to electrons tunneling between the tip and resist or substrate [121][122][123], which results in the disruption of chemical bonds, e.g., Si–H bonds for silicon surfaces. The method must be performed in vacuum but can

Nanotribology

• Enrico Gnecco,
• Susan Perkin,
• Andrea Vanossi and
• Ernst Meyer

Beilstein J. Nanotechnol. 2018, 9, 2330–2331, doi:10.3762/bjnano.9.217

• , has triggered a true revolution in our understanding of friction at the atomic scale. This is exemplified by the lattice resolved friction force images on oxidized silicon surfaces in the tribochemistry study presented by the Bennewitz group [9]. On a larger scale, alternative surface scan methods

Friction force microscopy of tribochemistry and interfacial ageing for the SiO_x/Si/Au system

• Christiane Petzold,
• Marcus Koch and
• Roland Bennewitz

Beilstein J. Nanotechnol. 2018, 9, 1647–1658, doi:10.3762/bjnano.9.157

• and transfer. Conclusion In summary, we investigated nanometer-scale friction phenomena between oxidized and clean silicon surfaces and gold surfaces by means of friction force microscopy in ultrahigh vacuum. We did not observe any contact ageing for oxidized silicon tips sliding on gold surfaces or

• on oxidized silicon surfaces, although we found evidence for atomic rearrangement in the course of scanning. We conclude that the contact formation with the gold surface is too fast and the contact too compliant to reveal contact ageing as holding-time-dependent static friction. For friction between

• oxidized silicon surfaces, the chemical bond formation leading to contact ageing does not occur in the absence of water in UHV. Both systems show very low lateral forces compared to pull-off forces, modulated by the atomic structure of the surface. When passivating layers are removed from tips or surfaces

Interface conditions of roughness-induced superoleophilic and superoleophobic surfaces immersed in hexadecane and ethylene glycol

• Yifan Li,
• Yunlu Pan and
• Xuezeng Zhao

Beilstein J. Nanotechnol. 2017, 8, 2504–2514, doi:10.3762/bjnano.8.250

• silicon wafer substrates roughened by treatment with KOH immersed in DI water. The result shows that slip length increases with roughness on a polymer-free surface. A similar result was reported by Guriyanova and co-workers [19]. They studied the slip length of nano-patterned silicon surfaces with varying

Imidazolium-based ionic liquids used as additives in the nanolubrication of silicon surfaces

• Patrícia M. Amorim,
• Ana M. Ferraria,
• Rogério Colaço,
• Luís C. Branco and
• Benilde Saramago

Beilstein J. Nanotechnol. 2017, 8, 1961–1971, doi:10.3762/bjnano.8.197

• Engenharia Mecânica, Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais, 1049-001 Lisboa, Portugal 10.3762/bjnano.8.197 Abstract In recent years, with the development of micro/nanoelectromechanical systems (MEMS/NEMS), the demand for efficient lubricants of silicon surfaces intensified

• /metal tribological pairs. However, the need for efficient lubrication of silicon surfaces rose with the development of micro/nanoelectromechanical systems (MEMS/NEMS) [21]. These miniaturized devices demand lubricants of high performance because the large surface-to-volume ratios may cause serious

• percentage (2 wt %) of ILs was sufficient to induce a decrease in CoF, which was most significant in the case of those containing the anion [EtSO4]. XPS analysis of the silicon surfaces after exposure to PEG + IL mixtures containing the anions [EtSO4] and [TfO], respectively, leading to the best and the

Structural model of silicene-like nanoribbons on a Pb-reconstructed Si(111) surface

• Agnieszka Stępniak-Dybala and
• Mariusz Krawiec

Beilstein J. Nanotechnol. 2017, 8, 1836–1843, doi:10.3762/bjnano.8.185

• structure in reversed AB registry with respect to the top Si(111) substrate layer, and reproduces well the experimental data. These findings provide a deeper insight into the formation of silicene nanostructures on metal-stabilized silicon surfaces, and may serve as help for the growth of silicene on other

• experimental data. These findings provide a deeper insight into the formation of silicene nanostructures on metal-induced silicon surfaces and open new routes to grow silicene on other substrates utilizing the mechanism of fast atomic diffusion. (a) STM topography (U = 2.0 V, I = 0.5 nA) of Si nanoribbons on a

Air–water interface of submerged superhydrophobic surfaces imaged by atomic force microscopy

• Markus Moosmann,
• Thomas Schimmel,
• Wilhelm Barthlott and
• Matthias Mail

Beilstein J. Nanotechnol. 2017, 8, 1671–1679, doi:10.3762/bjnano.8.167

• surface. The samples were produced in a two-step molding process [20] (see Experimental section) and were based on silicon surfaces with micro-pillars structured by reactive ion etching (RIE). Tegotop® was applied as a superhydrophobic coating. Figure 3a shows an SEM image (top view) of the final epoxy

Functional dependence of resonant harmonics on nanomechanical parameters in dynamic mode atomic force microscopy

• Federico Gramazio,
• Matteo Lorenzoni,
• Francesc Pérez-Murano,
• Enrique Rull Trinidad,
• Urs Staufer and
• Jordi Fraxedas

Beilstein J. Nanotechnol. 2017, 8, 883–891, doi:10.3762/bjnano.8.90

• kHz on silicon surfaces and A1 = 34 nm. The black curve in Figure 4c was taken at the beginning of the experiment (fresh tip). The rest of the curves are acquired after the acquisition of several intermediate images (i.e., several images are taken in between each approach curve). The order in which

• topographic, phase and amplitude images. (a) Amplitude of the fundamental mode, (b) phase of the fundamental mode and (c) amplitude of the 6th harmonic. Experiments have been performed with a nominally kc ≈ 44 N/m rectangular AFM cantilever with f0 = 293 kHz on silicon surfaces and A1 = 34 nm. (color online

• ) Evolution of the mean value of the amplitude of the 6th harmonic extracted from the amplitude image simultaneously acquired with the topography and phase images. Experiments have been performed with a nominally 44 N/m rectangular AFM cantilever with resonance frequency 350 kHz on silicon surfaces under

Silicon microgrooves for contact guidance of human aortic endothelial cells

• Sara Fernández-Castillejo,
• Pilar Formentín,
• Úrsula Catalán,
• Josep Pallarès,
• Lluís F. Marsal and
• Rosa Solà

Beilstein J. Nanotechnol. 2017, 8, 675–681, doi:10.3762/bjnano.8.72

• were more elongated on grooved than on flat silicon surfaces, where the cells showed a more flattened and spread morphology. Moreover, no statistical differences were observed in the circularity of cells cultured on the different patterned structures assessed. Moreover, cells cultured on unpatterned

Role of oxygen in wetting of copper nanoparticles on silicon surfaces at elevated temperature

• Tapas Ghosh and
• Biswarup Satpati

Beilstein J. Nanotechnol. 2017, 8, 425–433, doi:10.3762/bjnano.8.45

• Tapas Ghosh Biswarup Satpati Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, HBNI, 1/AF Bidhannagar, Kolkata-700064, India 10.3762/bjnano.8.45 Abstract Copper nanoparticles have been deposited on silicon surfaces by a simple galvanic displacement reaction, and

• spectroscopy (EDX) and X-ray diffraction (XRD) analysis shows that the thermal oxidation of the copper nanoparticles and formation of cupric oxide (CuO) on silicon surfaces leads to wetting rather than agglomeration. In contrast, agglomeration has been observed when copper nanoparticles were annealed in a

• oxidation of Cu nanoparticles deposited by the galvanic displacement reaction on silicon surfaces at various ambient conditions. Experimental Copper nanoparticles have been deposited on Si(100) substrates by an easy, one-step galvanic displacement reaction. 5 mL of 10 mM CuSO4 (Merck, >99%) solution was

Influence of hydrofluoric acid treatment on electroless deposition of Au clusters

• Rachela G. Milazzo,
• Antonio M. Mio,
• Giuseppe D’Arrigo,
• Emanuele Smecca,
• Alessandra Alberti,
• Gabriele Fisichella,
• Filippo Giannazzo,
• Corrado Spinella and
• Emanuele Rimini

Beilstein J. Nanotechnol. 2017, 8, 183–189, doi:10.3762/bjnano.8.19

• nanoparticle arrays and to improve the conversion efficiency of hybrid photovoltaic devices. Keywords: electroless deposition; galvanic deposition; gold nanoparticles; HF acid treatment; HF-propelled motion; hydrogen termination; silicon surfaces; Introduction Gold nanoparticles on silicon substrates have

Nano- and microstructured materials for in vitro studies of the physiology of vascular cells

• Alexandra M. Greiner,
• Adria Sales,
• Hao Chen,
• Sarah A. Biela,
• Dieter Kaufmann and
• Ralf Kemkemer

Beilstein J. Nanotechnol. 2016, 7, 1620–1641, doi:10.3762/bjnano.7.155

• nanopost structures showed stronger adhesion compared to those cultured on flat PEG substrate [36]. A different work demonstrated that ECs on silicon nanoposts, revealed stronger adhesion and spreading in comparison to ECs on flat silicon surfaces [210]. It has also been reported that the nanoroughness of

Entropy effects in the collective dynamic behavior of alkyl monolayers tethered to Si(111)

• Christian Godet

Beilstein J. Nanotechnol. 2015, 6, 583–594, doi:10.3762/bjnano.6.60

• microscope (AFM) tip is moved away (laterally or vertically) [7][9][10][11][12][13][14][15][16][18][21][23][24]. In the field of molecular electronics, many studies were performed by using junctions made of alkyl OML tethered to oxide-free silicon surfaces through chemically stable non-polar Si–C bonds [4

Formation of stable Si–O–C submonolayers on hydrogen-terminated silicon(111) under low-temperature conditions

• Yit Lung Khung,
• Siti Hawa Ngalim,
• Andrea Scaccabarozzi and
• Dario Narducci

Beilstein J. Nanotechnol. 2015, 6, 19–26, doi:10.3762/bjnano.6.3

• techniques to graft organics onto silicon surfaces [2][3][4][5][6]. It is the process during which unsaturated carbon reacts with hydrogen-terminated silicon (SiH) to form a stable submonolayer through covalent Si–C linkages at the surface. The reaction can typically be mediated through catalysts or Lewis

Localized surface plasmon resonances in nanostructures to enhance nonlinear vibrational spectroscopies: towards an astonishing molecular sensitivity

• Dan Lis and
• Francesca Cecchet

Beilstein J. Nanotechnol. 2014, 5, 2275–2292, doi:10.3762/bjnano.5.237

• through morphology is an interesting alternative that, under some conditions, can lead to enhancement of the electromagnetic field at the interface. Indeed, the authors successfully amplified the SFG signal of the H-terminated porous silicon surfaces (with increasing porosity). Although they did not

In situ metalation of free base phthalocyanine covalently bonded to silicon surfaces

• Fabio Lupo,
• Cristina Tudisco,
• Federico Bertani,
• Enrico Dalcanale and
• Guglielmo G. Condorelli

Beilstein J. Nanotechnol. 2014, 5, 2222–2229, doi:10.3762/bjnano.5.231

• but it is due to the hydrosilylation reaction. Control samples were, therefore, prepared by treating flat and porous silicon surfaces with a phthalocyanine (2-Pc), in which no double bonds are present in the lateral chains, under the same experimental conditions adopted for 1-Pc anchoring. Elemental

• covalent anchor phthalocyanine on flat and porous silicon surfaces. The grafting route was validated by XPS characterization and control experiments that were performed by adopting a phthalocyanine inert towards hydrosilylation. XPS results also suggest that on flat substrates a relevant fraction of

• bonded to both flat and porous silicon surfaces. However, the metalation efficiency is higher in the case of porous samples. These differences were attributed to the different surface interactions observed for the two samples. If strong surface interactions are present, as in the case of flat silicon